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publication date : oct 2011 1 outline drawing < silicon rf power mos fet ( discrete ) > rd 0 4hms 2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w description rd04hms2 is mos fet type transistor specifically designed for vhf/uhf/890 - 950mhz rf power amplifiers applications. fea tures 1. high power gain and high efficiency pout=5.0wtyp., gp=14dbtyp. drain effi.=53%typ. @vds=12.5v, pin=0.2w, f=950mhz 2. integrated gate protection diode application for output stage of high power amplifiers in vhf/ uhf/890 - 950mhz band mobile radio sets. rohs compliant rd04hms2 is a rohs compliant product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the following excep tions of rohs directions. 1. lead in high melting temperature type solders (i.e. tin - lead solder alloys containing more than85% lead.) absolute maximum ratings ( tc=25c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to sourc e voltage vgs=0v 40 v vgss gate to source voltage vds=0v - 5 / +1 0 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 0.7 w id drain current - 3 a tch junction temperature - 1 50 c tstg storage temperature - - 40 to +1 2 5 c rth j - c thermal resistance junction to case 2.5 c /w note: above parameters are guaranteed independently. 0.2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):center value unit:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 . 0 + / - 0 . 0 5 (0.25) 2 3 1 3 . 5 + / - 0 . 0 5 2 . 0 + / - 0 . 0 5 (0.25) ( 0 . 2 2 ) ( 0 . 2 2 )
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 2 electrical characteristics ( tc=25c, unless otherwise noted) limits unit symbol parameter conditions min typ max. idss zero gate voltage drain current vds= 3 7 v, vgs=0v - - 5 a igss gate to source leak current vgs= 10 v, vds=0v - - 2.5 a vth gate threshold voltage vds=12v, ids=1 ma 1.6 - 2.6 v pout1 output p ower - 5.0 - w ? d1 drain efficiency f= 950 mhz*,vds=12.5v, p in = 0.2 w, idq= 0.1 a - 58 - % pout2 output p ower - 5.5 - w ? d2 drain efficiency f=175mhz**,vds=12.5v, pin= 0.2 w, idq= 0.1 a - 73 - % vswrt load vswr tolerance vds=15.2v, po=4w(pin:control) f=135mhz, idq=0.1a, zg=50 ? zl=all phase 20:1 - - vswr note: above parameters, ratings, limits and conditions are subject to change. * in mitsubishi 890 - 950mhz evaluation board ** in mitsubishi vhf evaluation board
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 3 typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) vds vs. crss characteristics 0 1 2 3 4 5 0 5 10 15 20 vds(v) c r s s ( p f ) ta=+25 f=1mhz vds vs. coss characteristics 0 10 20 30 40 50 0 5 10 15 20 vds(v) c o s s ( p f ) ta=+25 f=1mhz vds vs. ciss characteristics 0 10 20 30 40 50 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25 f=1mhz vgs-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 vgs(v) i d s ( a ) ta=+25 vds=10v vds-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 12 14 vds (v) i d s ( a ) vgs=5.0v vgs=4.5v vgs=4.0v vgs=3.5v vgs=3.0v ta=+25
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 4 vhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 2 4 6 8 10 12 14 16 18 130 140 150 160 170 180 f (mhz) p o u t ( w ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) pout d gp idd frequency characteristics @f=135 to 175mhz ta=+25deg.c, vds=12.5v,idq=0.1a, pin=0.2w
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 5 v hf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=135mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 9 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=135mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=155mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 9 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=155mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=175mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 9 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=175mhz ta=+25deg.c,vds=12.5v,idq=0.1a
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 6 vhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) ta=25deg.c , idq=0.1a, pin=0.2w 0 1 2 3 4 5 6 7 4 5 6 7 8 9 10 11 12 13 vds(v) p o u t ( w ) 155mhz 135mhz 175mhz ta=25deg.c , idq=0.1a , pin=0.2w 60 65 70 75 80 85 90 4 5 6 7 8 9 10 11 12 13 vds(v) d r a i n e f f i ( % ) 135mhz 155mhz 175mhz
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 7 uhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 2 4 6 8 10 12 14 16 370 380 390 400 410 420 430 440 450 460 470 480 f (mhz) p o u t ( w ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd frequency characteristics @f=380 to 470mhz ta=+25deg.c, vds=12.5v,idq=0.1a, pin=0.2w
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 8 uhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=380mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=380mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=425mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=425mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=470mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 8 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=470mhz ta=+25deg.c,vds=12.5v,idq=0.1a
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 9 uhf - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) ta=25deg.c , idq=0.1a, pin=0.2w 0 1 2 3 4 5 6 7 4 5 6 7 8 9 10 11 12 13 vds(v) p o u t ( w ) 470mhz 380mhz 425mhz ta=25deg.c , idq=0.1a , pin=0.2w 55 60 65 70 75 80 85 4 5 6 7 8 9 10 11 12 13 vds(v) d r a i n e f f i ( % ) 380mhz 425mhz 470mhz
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 10 890 - 950mhz - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 2 4 6 8 10 12 14 16 880 890 900 910 920 930 940 950 960 f (mhz) p o u t ( w ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd frequency characteristics @f=890 to 950mhz ta=+25deg.c, vds=12.5v,idq=0.1a, pin=0.2w
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 11 890 - 950mhz - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=890mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=890mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=920mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=950mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 1 2 3 4 5 6 7 0 0.05 0.1 0.15 0.2 0.25 0.3 pin(w) p o u t ( w ) , i d d ( a ) 0 10 20 30 40 50 60 70 g p ( d b ) , d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=950mhz ta=+25deg.c,vds=12.5v,idq=0.1a 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 pin(dbm) p o u t ( d b m ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 d r a i n e f f i ( % ) pout d gp idd pin-po characteristics @f=920mhz ta=+25deg.c,vds=12.5v,idq=0.1a
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 12 890 - 950mhz - band typical characteristics (these are only typical curves and devices are not necessarily guaranteed at these curves.) ta=25deg.c , idq=0.1a, pin=0.2w 0 1 2 3 4 5 6 7 4 5 6 7 8 9 10 11 12 13 vds(v) p o u t ( w ) 920mhz 890mhz 950mhz ta=25deg.c , idq=0.1a , pin=0.2w 50 55 60 65 70 4 5 6 7 8 9 10 11 12 13 vds(v) d r a i n e f f i ( % ) 890mhz 950mhz 920mhz
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 13 equivalent circ uitry for vhf evaluation board (f=135 ? 175mhz) for more information regarding this evaluation board, refer to application note ?an - vhf - 051? c1 100pf c2 27pf c3 30pf c4 30pf c5 36pf c6 39pf c7 39pf c8 24pf c9 100pf c10 1000pf c11 1000pf c12 1000pf c13 1000pf c14 2 2 f r1 4.7k ohm r2 47 ohm l1 37nh * enameled wire 7turns, d:0.43mm, 2.46mmo.d l2 56nh * enameled wire12turns, d:0.23mm, 1.66mmo.d l3 22nh * enameled wire 5turns, d:0.43mm, 2.46mmo.d l4 29nh * enameled wire 6turns, d:0.43mm, 2.46mmo.d l5 37nh * enameled wire 7turns, d:0.43mm, 2.46mmo.d * inductor of rolling coil measurement condition : f=100mhz chip ceramic capacitiors electrolytic capacitior chip resistors chip resistors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors c9 rd04hms2 c6 0.5mm 8mm w w c2 rf-in vdd 21mm 5.5mm c14 c12 c10 rf-out 21mm w:line width=1.0mm note:board material glass-epoxy substrate micro strip line width=1.3mm/50ohm,er:4.8,t=0.8mm l5 4mm c3 c13 3mm c11 4.5mm 7.5mm c4 f=135mhz vgg c1 5.5mm c7 r1 c8 c5 r2 1.5mm 4mm 0.5mm 3mm 2mm l1 l2 l3 l4
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 14 equivalent circuitry for uhf evaluation board (f=380 ? 470 mhz) for more information regarding this evaluation board, refer to application note ?an - uhf - 114? c1 100pf c2 6pf c3 20pf c4 36pf c5 24pf c6 36pf c7 20pf c8 7pf c9 100pf c10 1000pf c11 22000pf c12 1000pf c13 22000pf c14 2 2 f r1 4.7k ohm r2 47 ohm l1 12nh * enameled wire 3turns, d:0.23mm, 1.66mmo.d l2 8nh * enameled wire 2turns, d:0.23mm, 1.66mmo.d l3 8nh * enameled wire 2turns, d:0.23mm, 1.66mmo.d l4 8nh * enameled wire 2turns, d:0.23mm, 1.66mmo.d l5 16nh * enameled wire 4turns, d:0.23mm, 1.66mmo.d l6 37nh * enameled wire 7turns, d:0.43mm, 2.46mmo.d * inductor of rolling coil measurement condition : f=100mhz chip ceramic capacitors electrolytic capacitor chip resistors chip resistors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors chip ceramic capacitors c9 rd04hms2 4.0mm w w c1 rf-in vdd 21mm 6.0mm c14 c12 c10 rf-out 21mm w:line width=1.0mm note:board material glass-epoxy substrate micro strip line width=1.3mm/50ohm,er:4.8,t=0.8mm l6 3.5mm c2 c13 14.5mm c11 1.5mm c3 f=470mhz vgg 5.5mm r1 c7 c5 r2 4.5mm 4.0mm l1 3.5mm 4.0mm l2 3.0mm c6 l3 l4 3.0mm l5 c8 1.0mm 5.0mm c4
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 15 equivalent circuitry for 890 - 950mhz evaluation board (f=890 ? 950mhz) for more information regarding this evaluation board, refer to application note ?an - 900 - 043? c1 150pf c2 4pf c3 9pf c4 16pf c5 10pf c6 12pf c7 5pf c8 4pf c9 150pf c10 100pf c11 1000pf c12 100pf c13 1000pf c14 2 2 f r1 4.7k ohm r2 33 ohm l1 37nh * enameled wire 7turns, d:0.43mm, 2.46mmo.d * inductor of rolling coil measurement condition : f=100mhz chip ceramic capacitiors electrolytic capacitior chip resistors chip resistors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors chip ceramic capacitiors
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 16 input / output impedance vs. freqency characteristics @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 135 34.15 + j 17.78 155 34.90 + j 21.74 175 28.10 + j 24.30 zin*: complex conjugate of intput impedance zin* (ohm) f=175mhz f=155mhz f=135mhz zo=50ohm zin* (f=135, 155, 175mhz) @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 135 14.18 + j 12.41 155 14.45 + j 15.35 175 13.90 + j 15.87 zout*: complex conjugate of output impedance zout* (ohm) f=175mhz f=155mhz f=135mhz zo=50ohm zout* (f=135, 155, 175mhz)
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 17 input / output impedance vs. freqenc y characteristics @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 380 7.83 + j 7.20 425 7.35 + j 7.93 470 6.32 + j 8.95 zout*: complex conjugate of output impedance zout* (ohm) f=470mhz f=425mhz f=380mhz zo=50ohm zout* (f=380, 425, 470mhz) @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 380 13.33 + j 5.61 425 13.49 + j 7.55 470 10.39 + j 9.64 zin*: complex conjugate of intput impedance zin* (ohm) f=470mhz f=425mhz f=380mhz zo=50ohm zin* (f=380, 425, 470mhz)
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 18 input / output impedance vs. freqency characteristics @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 890 2.59 + j 3.87 920 2.60 + j 4.81 950 2.67 + j 5.69 zin*: complex conjugate of intput impedance zin* (ohm) f=950mhz f=920mhz f=890mhz zo=50ohm zin* (f=890, 920, 950mhz) @pin=0.2w, vds=12.5v,idq=0.1a f (mhz) 890 4.19 + j 3.38 920 4.47 + j 3.99 950 4.83 + j 4.52 zout*: complex conjugate of output impedance zout* (ohm) f=950mhz f=920mhz f=890mhz zo=50ohm zout* (f=890, 920, 950mhz)
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 19 small single parameter of rd04hms2 (@vds=12.5v,idq=100ma) freq [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.813 -120.5 19.034 105.3 0.030 15.3 0.585 -103.6 135 0.800 -132.2 14.641 96.1 0.031 7.2 0.581 -115.2 150 0.799 -136.1 13.199 92.8 0.031 4.0 0.585 -118.9 175 0.799 -141.1 11.253 88.0 0.030 -0.4 0.595 -124.0 200 0.803 -145.1 9.749 83.8 0.030 -4.2 0.610 -128.0 250 0.817 -151.2 7.504 77.0 0.028 -10.0 0.644 -134.0 300 0.829 -155.4 6.002 71.2 0.027 -15.6 0.679 -138.6 350 0.843 -158.7 4.890 66.6 0.025 -19.4 0.713 -142.4 380 0.851 -160.3 4.339 64.5 0.024 -21.5 0.732 -144.6 400 0.856 -161.4 4.069 63.2 0.023 -22.8 0.744 -146.0 450 0.868 -163.7 3.394 59.4 0.022 -25.5 0.773 -148.9 470 0.876 -164.7 3.196 58.5 0.021 -26.6 0.783 -150.0 500 0.884 -166.0 2.894 56.1 0.020 -27.1 0.797 -151.6 550 0.893 -167.7 2.506 54.6 0.018 -28.6 0.818 -154.0 600 0.901 -169.3 2.150 52.7 0.017 -30.0 0.836 -156.3 650 0.907 -170.7 1.840 49.8 0.016 -31.5 0.852 -158.3 700 0.917 -172.2 1.636 49.2 0.014 -30.4 0.866 -160.1 750 0.923 -173.4 1.454 48.5 0.013 -31.2 0.877 -161.8 800 0.928 -174.4 1.263 48.0 0.012 -30.7 0.888 -163.3 850 0.931 -175.4 1.119 46.5 0.011 -29.9 0.899 -164.7 890 0.933 -176.0 1.049 48.2 0.010 -30.5 0.906 -165.7 900 0.934 -176.1 1.035 47.6 0.010 -30.6 0.908 -166.0 950 0.936 -176.8 0.914 46.7 0.008 -29.0 0.913 -167.1 1000 0.939 -177.4 0.838 46.8 0.008 -28.0 0.919 -168.1 1050 0.941 -178.0 0.758 46.8 0.007 -25.7 0.924 -169.0 1100 0.942 -178.4 0.702 48.8 0.006 -23.6 0.928 -170.0 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 20 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w publication date : oct 2011 21 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration t o safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these mat erials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belon ging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algori thms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these mate rial s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor pr oduct distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any dam age, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric. com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicabil ity of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mits ubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from th e japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsub ishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.

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